BSP88H6327XTSA1 | Infineon Technologies
Infineon Technologies N channel SIPMOS small signal transistor, 240 V, 350 mA, PG-SOT223, BSP88H6327XTSA1
Unit Price (€ / pc.)
0.3332 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, BSP88H6327XTSA1, Infineon Technologies
Features
- N-channel
- Enhancement mode
- Logic level
- Avalanche rated
- dv/dt rated
Applications
- Automotive
- Consumer
- DC-DC
- eMobility
- Motor control
- Onboard charger
- Telecom
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 6 Ω | |
| Einschaltwiderstand RDS (on) max @VGS=4,5V | 7.5 Ω | |
| Gate Charge Qg @10V (nC) | 6.8x10<sup>-9</sup> C | |
| Gehäuse | PG-SOT223 | |
| max. Spannung | 240 V | |
| max. Strom | 350 mA | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 1.8 W |
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Logistics
| Ursprungsland | DE |
| Zolltarifnummer | 85412900 |
| MSL | MSL 1 |
| Originalverpackung | Rolle mit 8.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
