BSS119NH6327XTSA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS small signal transistor, 100 V, 0.19 A, SOT23, BSS119NH6327XTSA1
Unit Price (€ / pc.)
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Available: 0 pcs.
Leadtime: On Request **
MOSFET, BSS119NH6327XTSA1, Infineon Technologies
Features
- N-channel
- Enhancement mode
- Logic level
- Avalanche rated
Applications
- Automotive
- Consumer
- DC-DC
- eMobility
- Motor control
- Onboard charger
- Telecom
Technical specifications
Ausführung | N-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 6 Ω | |
Gate Charge Qg @10V (nC) | 6x10<sup>-10</sup> C | |
Gehäuse | SOT23 | |
max. Spannung | 100 V | |
max. Strom | 0.19 A | |
max. Temperatur | 150 °C | |
min. Temperatur | -55 °C | |
Montage | SMD | |
Verlustleistung W (DC) | 0.5 W |
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Logistics
Ursprungsland | CN |
Zolltarifnummer | 85412900 |
Originalverpackung | Rolle mit 27.000 Stück |
Compliance
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |