BSS169H6327XTSA1 | Infineon Technologies

Name: Infineon Technologies N channel SIPMOS small signal transistor, 100 V, 0.17 A, SOT-23, BSS169H6327XTSA1
Brand: Infineon Technologies
SKU: 17S8704
Price: 0.23 EUR
Availability: OutOfStock

Infineon Technologies N channel SIPMOS small signal transistor, 100 V, 0.17 A, SOT-23, BSS169H6327XTSA1

Order No.: 17S8704

EAN: 4099879033024

MPN:

BSS169H6327XTSA1

Series: BSS

BSS169H6327XTSA1 Infineon Technologies MOSFETs Image 2

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Key Specification:

Ausführung N-Kanal

max. Spannung 100 V

max. Strom 0.17 A

Einschaltwiderstand RDS (on) max @VGS=10V 12 Ω

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.2285 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.23 € *

Price list

Quantity

Price per unit*

1 pcs.

0.2285 €

100 pcs.

0.2035 €

3000 pcs.

0.1678 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, BSS169H6327XTSA1, Infineon Technologies

Features

N-channel
Depletion mode
dv/dt rated
Pb-free lead-plating, Halogen-free, Rohs-compliant

Applications

Automotive
Consumer
DC-DC
eMobility
Motor control
Onboard charger
Telecom

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	12 Ω
	Gate Charge Qg @10V (nC)	1.4x10<sup>-9</sup> C
	Gehäuse	SOT-23
	max. Spannung	100 V
	max. Strom	0.17 A
	max. Temperatur	150 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	0.36 W