BSS223PWH6327XTSA1 | Infineon Technologies

Name: Infineon Technologies P-channel OptiMOS-P small signal transistor, -20 V, -0.39 A, PG-SOT323-3, BSS223PWH6327XTSA1
Brand: Infineon Technologies
SKU: 88S7609
Price: 0.10 EUR
Availability: OutOfStock

Infineon Technologies P-channel OptiMOS-P small signal transistor, -20 V, -0.39 A, PG-SOT323-3, BSS223PWH6327XTSA1

Order No.: 88S7609

EAN: 4099879035097

MPN:

BSS223PWH6327XTSA1

SP000843010

Series: BSS

BSS223PWH6327XTSA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version P-channel

max. Voltage -20 V

Max. current -0.39 A

drain-source on resistance RDS (on) max @VGS=10V 1.2 Ω

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.0964 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.10 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, BSS223PWH6327XTSA1, Infineon Technologies

Features

P-Channel
Enhancement mode
Super logic level
Avalanche rated
dv/dt rated

Applications

Power management functions
Motor control
On-board charger
DC-DC
Consumer
Logic level translators
Power MOSFET gate drivers

Technical specifications

	Version	P-channel
	drain-source on resistance RDS (on) max @VGS=10V	1.2 Ω
	Gate Charge Qg @10V (nC)	-5x10<sup>-10</sup> C
	Enclosure	PG-SOT323-3
	max. Voltage	-20 V
	Max. current	-0.39 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	0.25 W