BSS806NEH6327XTSA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS2 small signal transistor, 20 V, 2.3 A, PG-SOT23-3, BSS806NEH6327XTSA1
Brand: Infineon Technologies
SKU: 88S7617
Price: 0.14 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS2 small signal transistor, 20 V, 2.3 A, PG-SOT23-3, BSS806NEH6327XTSA1

Order No.: 88S7617

EAN: 4099879035110

MPN:

BSS806NEH6327XTSA1

SP000999336

Series: BSS

BSS806NEH6327XTSA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 20 V

max. Strom 2.3 A

Einschaltwiderstand RDS (on) max @VGS=10V 550 mΩ

Ordering Information:

NCNR-Produkt ist nicht stornierbar/retournierbar

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.1440 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.14 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, BSS806NEH6327XTSA1, Infineon Technologies

Features

N-channel
Enhancement mode
Ultra logic level
Avalanche rated
ESD protected

Applications

Automotive
Consumer
DC-DC
eMobility
Motor control
Onboard charger
Telecom

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	550 mΩ
	Gate Charge Qg @10V (nC)	1.7x10<sup>-9</sup> C
	Gehäuse	PG-SOT23-3
	max. Spannung	20 V
	max. Strom	2.3 A
	max. Temperatur	150 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	0.5 W