BSS87H632BFTSA1 | Infineon Technologies
Infineon Technologies N channel SIPMOS small signal transistor, 200 V, 400 mA, SOT-223, BSS87H632BFTSA1
Unit Price (€ / pc.)
0.3927 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, BSS87H632BFTSA1, Infineon Technologies
Features
- N-channel
- Enhancement mode
- Logic level
- dv/dt rated
Applications
- Automotive
- Consumer
- DC-DC
- eMobility
- Motor control
- Onboard charger
- Telecom
Technical specifications
Ausführung | N-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 6 Ω | |
Einschaltwiderstand RDS (on) max @VGS=4,5V | 7.5 Ω | |
Gate Charge Qg @10V (nC) | 3.7x10<sup>-9</sup> C | |
Gehäuse | SOT-223 | |
max. Spannung | 200 V | |
max. Strom | 400 mA | |
max. Temperatur | 150 °C | |
min. Temperatur | -55 °C | |
Montage | SMD |
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Logistics
Ursprungsland | MY |
Zolltarifnummer | 85412900 |
Compliance
RoHS konform | No |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |