BSS87H632BFTSA1 | Infineon Technologies

Name: Infineon Technologies N channel SIPMOS small signal transistor, 200 V, 400 mA, SOT-223, BSS87H632BFTSA1
Brand: Infineon Technologies
SKU: 17S8660
Price: 0.39 EUR
Availability: OutOfStock

Infineon Technologies N channel SIPMOS small signal transistor, 200 V, 400 mA, SOT-223, BSS87H632BFTSA1

Order No.: 17S8660

EAN: 4099879032973

MPN:

BSS87H632BFTSA1

Series: BSS

Image may differ

Key Specification:

Version N channel

max. Voltage 200 V

Max. current 400 mA

drain-source on resistance RDS (on) max @VGS=4,5V 7.5 Ω

drain-source on resistance RDS (on) max @VGS=10V 6 Ω

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.3927 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.39 € *

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Description

MOSFET, BSS87H632BFTSA1, Infineon Technologies

Features

N-channel
Enhancement mode
Logic level
dv/dt rated

Applications

Automotive
Consumer
DC-DC
eMobility
Motor control
Onboard charger
Telecom

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	6 Ω
	drain-source on resistance RDS (on) max @VGS=4,5V	7.5 Ω
	Gate Charge Qg @10V (nC)	3.7x10<sup>-9</sup> C
	Enclosure	SOT-223
	max. Voltage	200 V
	Max. current	400 mA
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	SMD