IPA80R1K4P7XKSA1 | Infineon Technologies

Name: Infineon Technologies N channel CoolMOSP7 power device, 800 V, 4 A, TO-220, IPA80R1K4P7XKSA1
Brand: Infineon Technologies
SKU: 17S6552
Price: 1.17 EUR
Availability: OutOfStock

Infineon Technologies N channel CoolMOSP7 power device, 800 V, 4 A, TO-220, IPA80R1K4P7XKSA1

Order No.: 17S6552

EAN: 4099879032829

MPN:

IPA80R1K4P7XKSA1

SP001422546

Series: IPA

IPA80R1K4P7XKSA1 Infineon Technologies MOSFETs Image 1

IPA80R1K4P7XKSA1 Infineon Technologies MOSFETs Image 2

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 800 V

max. Strom 4 A

Einschaltwiderstand RDS (on) max @VGS=10V 1.4 Ω

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.1662 € *

Available: 0 pcs.

Leadtime: On Request **

Add to Cart

Total Price:

1.17 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPA80R1K4P7XKSA1, Infineon Technologies

Features

Enables high power density design
Integrated zener diode
ESD protected

Applications

Industrial applications
Adapters
LED lighting
Consumer applications

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	1.4 Ω
	Gate Charge Qg @10V (nC)	1x10<sup>-8</sup> C
	Gehäuse	TO-220
	max. Spannung	800 V
	max. Strom	4 A
	max. Temperatur	150 °C
	min. Temperatur	-55 °C
	Montage	THT
	Verlustleistung W (DC)	24 W