IPA80R1K4P7XKSA1 | Infineon Technologies

Name: Infineon Technologies N channel CoolMOSP7 power device, 800 V, 4 A, TO-220, IPA80R1K4P7XKSA1
Brand: Infineon Technologies
SKU: 17S6552
Price: 1.17 EUR
Availability: OutOfStock

Infineon Technologies N channel CoolMOSP7 power device, 800 V, 4 A, TO-220, IPA80R1K4P7XKSA1

Order No.: 17S6552

EAN: 4099879032829

MPN:

IPA80R1K4P7XKSA1

SP001422546

Series: IPA

IPA80R1K4P7XKSA1 Infineon Technologies MOSFETs Image 1

IPA80R1K4P7XKSA1 Infineon Technologies MOSFETs Image 2

Image may differ

Key Specification:

Version N channel

max. Voltage 800 V

Max. current 4 A

drain-source on resistance RDS (on) max @VGS=10V 1.4 Ω

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.1662 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

1.17 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPA80R1K4P7XKSA1, Infineon Technologies

Features

Enables high power density design
Integrated zener diode
ESD protected

Applications

Industrial applications
Adapters
LED lighting
Consumer applications

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	1.4 Ω
	Gate Charge Qg @10V (nC)	1x10<sup>-8</sup> C
	Enclosure	TO-220
	max. Voltage	800 V
	Max. current	4 A
	max. operating temperature	150 °C
	min. operating temperature	-55 °C
	Assembly	THT
	Power loss	24 W