IPB083N10N3GATMA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power transistor, 100 V, 80 A, PG-TO263-3, IPB083N10N3GATMA1
Unit Price (€ / pc.)
1.7017 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
1.70 € *
Price list
Quantity
Price per unit*
3 pcs.
1.7017 €
15 pcs.
1.4756 €
75 pcs.
1.3209 €
400 pcs.
1.1900 €
1000 pcs.
1.0829 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IPB083N10N3GATMA1, Infineon Technologies
Features
- N-channel
- Excellent gate charge
- Very low on-resistance
- Ideal for high-frequency switching and synchronous rectification
Applications
- Synchronous rectification for AC-DC SMPS
- Motor control for 48 V–80 V systems
- Isolated DC-DC converters
- Or-ing switches and circuit breakers in 48 V systems
- Class D audio amplifiers
- Uninterruptible power supplies (UPS)
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 8.3 mΩ | |
| Gate Charge Qg @10V (nC) | 4.2x10<sup>-8</sup> C | |
| Gehäuse | PG-TO263-3 | |
| max. Spannung | 100 V | |
| max. Strom | 80 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 125 W |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 1 Stück |
