IPB090N06N3GATMA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power transistor, 60 V, 50 A, PG-TO263-3, IPB090N06N3GATMA1
Unit Price (€ / pc.)
1.2971 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
1.30 € *
Price list
Quantity
Price per unit*
3 pcs.
1.2971 €
15 pcs.
1.1305 €
75 pcs.
1.0115 €
400 pcs.
0.9044 €
1000 pcs.
0.8211 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IPB090N06N3GATMA1, Infineon Technologies
Features
- N-channel
- Excellent gate charge
- Very low on-resistance
- Avalanche rated
Applications
- Synchronous rectification
- Solar micro inverter
- Isolated DC-DC converters
- Motor control for 12-48 V systems
- Or-ing switches
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 9 mΩ | |
| Gate Charge Qg @10V (nC) | 3.6x10<sup>-8</sup> C | |
| Enclosure | PG-TO263-3 | |
| max. Voltage | 60 V | |
| Max. current | 50 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 71 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 1 piece |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
