IPB120N03S4L03ATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOST2 power transistor, 30 V, 120 A, PG-TO263-3, IPB120N03S4L03ATMA1
Brand: Infineon Technologies
SKU: 88S9010
Price: 1.79 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOST2 power transistor, 30 V, 120 A, PG-TO263-3, IPB120N03S4L03ATMA1

Order No.: 88S9010

EAN: 4099879035226

MPN:

IPB120N03S4L03ATMA1

SP000936514

Series: IPB

IPB120N03S4L03ATMA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 120 A

drain-source on resistance RDS (on) max @VGS=10V 3 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.7850 € *

Available: 0 pcs.

Leadtime: On Request **

Add to Cart

Total Price:

1.79 € *

Price list

Quantity

Price per unit*

3 pcs.

1.7850 €

15 pcs.

1.5946 €

75 pcs.

1.4280 €

400 pcs.

1.2971 €

1000 pcs.

1.1900 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPB120N03S4L03ATMA1, Infineon Technologies

Features

N-channel
Enhancement mode
Avalanche rated

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	3 mΩ
	Gate Charge Qg @10V (nC)	5.5x10<sup>-8</sup> C
	Enclosure	PG-TO263-3
	max. Voltage	30 V
	Max. current	120 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	79 W