IPB70N04S406ATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOST2 power transistor, 40 V, 70 A, PG-TO263-3, IPB70N04S406ATMA1
Brand: Infineon Technologies
SKU: 88S9097
Price: 1.40 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOST2 power transistor, 40 V, 70 A, PG-TO263-3, IPB70N04S406ATMA1

Order No.: 88S9097

EAN: 4099879035257

MPN:

IPB70N04S406ATMA1

SP000711476

Series: IPB

IPB70N04S406ATMA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 40 V

Max. current 70 A

drain-source on resistance RDS (on) max @VGS=10V 6.2 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.4042 € *

Available: 0 pcs.

Leadtime: On Request **

Add to Cart

Total Price:

1.40 € *

Price list

Quantity

Price per unit*

3 pcs.

1.4042 €

15 pcs.

1.2257 €

75 pcs.

1.0948 €

400 pcs.

0.9877 €

1000 pcs.

0.8925 €

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPB70N04S406ATMA1, Infineon Technologies

Features

N-channel
Enhancement mode
MSL1 up to 260°C peak reflow
Avalanche rated

Applications

EPS motor control
3-phase and H-bridge motors
HVAC fan control
Electric pumps

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	6.2 mΩ
	Gate Charge Qg @10V (nC)	2.45x10<sup>-8</sup> C
	Enclosure	PG-TO263-3
	max. Voltage	40 V
	Max. current	70 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	58 W