IPB80N03S4L03ATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOST2 power transistor, 30 V, 80 A, PG-TO263-3, IPB80N03S4L03ATMA1
Brand: Infineon Technologies
SKU: 88S9102
Price: 0.93 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOST2 power transistor, 30 V, 80 A, PG-TO263-3, IPB80N03S4L03ATMA1

Order No.: 88S9102

EAN: 4099879035264

MPN:

IPB80N03S4L03ATMA1

SP000274982

Series: IPB

IPB80N03S4L03ATMA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 30 V

Max. current 80 A

drain-source on resistance RDS (on) max @VGS=10V 3.4 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

0.9282 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

0.93 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPB80N03S4L03ATMA1, Infineon Technologies

Features

N-channel
Enhancement mode
MSL1 up to 260°C peak reflow
Avalanche rated

Applications

EPS motor control
3-phase and H-bridge motors
HVAC fan control
Electric pumps

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	3.4 mΩ
	Gate Charge Qg @10V (nC)	6x10<sup>-8</sup> C
	Enclosure	PG-TO263-3
	max. Voltage	30 V
	Max. current	80 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	SMD
	Power loss	94 W