IPB80N06S407ATMA2 | Infineon Technologies
Infineon Technologies N channel OptiMOST2 power transistor, 60 V, 80 A, PG-TO263-3, IPB80N06S407ATMA2
Unit Price (€ / pc.)
1.7374 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
1.74 € *
Price list
Quantity
Price per unit*
3 pcs.
1.7374 €
15 pcs.
1.5113 €
75 pcs.
1.3566 €
400 pcs.
1.2138 €
1000 pcs.
1.1067 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IPB80N06S407ATMA2, Infineon Technologies
Features
- N-channel
- Enhancement mode
- MSL1 up to 260°C peak reflow
- Avalanche rated
Applications
- Valves control
- Solenoids control
- Lighting
- Single-ended motors
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 7.1 mΩ | |
Gate Charge Qg @10V (nC) | 4.3x10<sup>-8</sup> C | |
Enclosure | PG-TO263-3 | |
max. Voltage | 60 V | |
Max. current | 80 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD | |
Power loss | 79 W |
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Logistics
Customs tariff number | 85412900 |
Original Packaging | Reel with 1,000 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |