IPI024N06N3GXKSA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS3 power transistor, 60 V, 120 A, PG-TO262-3, IPI024N06N3GXKSA1
Brand: Infineon Technologies
SKU: 88S9311
Price: 2.86 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS3 power transistor, 60 V, 120 A, PG-TO262-3, IPI024N06N3GXKSA1

Order No.: 88S9311

EAN: 4099879035295

MPN:

IPI024N06N3GXKSA1

SP000680644

Series: IPI

IPI024N06N3GXKSA1 Infineon Technologies MOSFETs Image 1

IPI024N06N3GXKSA1 Infineon Technologies MOSFETs Image 2

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 60 V

max. Strom 120 A

Einschaltwiderstand RDS (on) max @VGS=10V 2.4 mΩ

Ordering Information:

NCNR-Produkt ist nicht stornierbar/retournierbar

Download Datasheet Technical specifications

Unit Price (€ / pc.)

2.856 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

2.86 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

Power transistor, IPI024N06N3GXKSA1, Infineon

OptiMOS Power-Transistor, ideal for high frequency switching and syncing with very low on-resistance and 100% avalanche tested.

Features

Excellent gate charge
Halogen-free
Optimized technology for DC/DC converters
Ideal for high frequency switching

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	2.4 mΩ
	Gate Charge Qg @10V (nC)	2.06x10<sup>-7</sup> C
	Gehäuse	PG-TO262-3
	max. Spannung	60 V
	max. Strom	120 A
	max. Temperatur	175 °C
	min. Temperatur	-55 °C
	Montage	THT
	Verlustleistung W (DC)	250 W