IPI147N12N3GAKSA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power transistor, 120 V, 56 A, PG-TO262-3, IPI147N12N3GAKSA1
Unit Price (€ / pc.)
1.2019 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, IPI147N12N3GAKSA1, Infineon Technologies
Features
- N-channel
- Excellent gate charge
- Very low on-resistance
- Ideal for high-frequency switching and synchronous rectification
Applications
- Synchronous rectification for AC-DC SMPS
- Motor control for 12 V–48 V systems
- Isolated DC-DC converters
- Or-ing switches and circuit breakers in 48 V systems
- Class D audio amplifiers
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 14.7 mΩ | |
| Gate Charge Qg @10V (nC) | 3.7x10<sup>-8</sup> C | |
| Enclosure | PG-TO262-3 | |
| max. Voltage | 120 V | |
| Max. current | 56 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 107 W |
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Logistics
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 1 piece |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
