IPI147N12N3GAKSA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power transistor, 120 V, 56 A, PG-TO262-3, IPI147N12N3GAKSA1
Unit Price (€ / pc.)
1.2019 € *
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Leadtime: On Request **
MOSFET, IPI147N12N3GAKSA1, Infineon Technologies
Features
- N-channel
- Excellent gate charge
- Very low on-resistance
- Ideal for high-frequency switching and synchronous rectification
Applications
- Synchronous rectification for AC-DC SMPS
- Motor control for 12 V–48 V systems
- Isolated DC-DC converters
- Or-ing switches and circuit breakers in 48 V systems
- Class D audio amplifiers
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 14.7 mΩ | |
| Gate Charge Qg @10V (nC) | 3.7x10<sup>-8</sup> C | |
| Gehäuse | PG-TO262-3 | |
| max. Spannung | 120 V | |
| max. Strom | 56 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 107 W |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 1 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
