IPI50N10S3L16AKSA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOST power transistor, 100 V, 50 A, PG-TO262-3, IPI50N10S3L16AKSA1
Brand: Infineon Technologies
SKU: 88S9355
Price: 1.73 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOST power transistor, 100 V, 50 A, PG-TO262-3, IPI50N10S3L16AKSA1

Order No.: 88S9355

EAN: 4099879035356

MPN:

IPI50N10S3L16AKSA1

SP000407120

Series: IPI

IPI50N10S3L16AKSA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Version N channel

max. Voltage 100 V

Max. current 50 A

drain-source on resistance RDS (on) max @VGS=10V 15 mΩ

Ordering Information:

NCNR product is not cancelable/returnable

Download Datasheet Technical specifications

Unit Price (€ / pc.)

1.7255 € *

Available: 0 pcs.

Leadtime: On Request **

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Total Price:

1.73 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPI50N10S3L16AKSA1, Infineon Technologies

Features

N-channel
Enhancement mode
MSL1 up to 260°C peak reflow
Avalanche rated

Applications

48 V inverter
48 V DC/DC
HID lighting

Technical specifications

	Version	N channel
	drain-source on resistance RDS (on) max @VGS=10V	15 mΩ
	Gate Charge Qg @10V (nC)	6.4x10<sup>-8</sup> C
	Enclosure	PG-TO262-3
	max. Voltage	100 V
	Max. current	50 A
	max. operating temperature	175 °C
	min. operating temperature	-55 °C
	Assembly	THT
	Power loss	100 W