IPI600N25N3GAKSA1 | Infineon Technologies
Infineon Technologies N channel OptiMOS3 power transistor, 250 V, 25 A, PG-TO262-3, IPI600N25N3GAKSA1
Unit Price (€ / pc.)
2.7251 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
2.73 € *
Price list
Quantity
Price per unit*
2 pcs.
2.7251 €
10 pcs.
2.4633 €
50 pcs.
2.2372 €
250 pcs.
2.1182 €
500 pcs.
2.0111 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IPI600N25N3GAKSA1, Infineon Technologies
Features
- N-channel
- Excellent gate charge
- Very low on-resistance
- Ideal for high-frequency switching and synchronous rectification
Applications
- Synchronous rectification for AC-DC SMPS
- Motor control for 48 V–110 V systems
- Isolated DC-DC converters
- Lighting for 110 V AC networks
- HID lamps
- Class D audio amplifiers
- Uninterruptible power supplies (UPS)
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 60 mΩ | |
| Gate Charge Qg @10V (nC) | 8x10<sup>-9</sup> C | |
| Gehäuse | PG-TO262-3 | |
| max. Spannung | 250 V | |
| max. Strom | 25 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 136 W |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
