IPT004N03LATMA1 | Infineon Technologies
Infineon Technologies N channel OptiMOSP2 power transistor, 30 V, 300 A, HSOF, IPT004N03LATMA1
Unit Price (€ / pc.)
2.9393 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, IPT004N03LATMA1, Infineon Technologies
Features
- P-channel
- Enhancement mode
- Logic level
- Avalanche rated
Applications
- Forklift
- Light electric vehicles (LEV) e.g. e-scooter, e-bikes or µ-car
- Point-of-load (POL)
- Telecom
- eFuse
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 0.4 Ω | |
| Einschaltwiderstand RDS (on) max @VGS=4,5V | 0.5 mΩ | |
| Gate Charge Qg @10V (nC) | 2.52x10<sup>-7</sup> C | |
| Gehäuse | HSOF | |
| max. Spannung | 30 V | |
| max. Strom | 300 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 300 W |
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Logistics
| Zolltarifnummer | 85412900 |
| MSL | MSL 1 |
| Originalverpackung | Rolle mit 2.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
