IPT015N10N5ATMA1 | Infineon Technologies

Name: Infineon Technologies N channel OptiMOS5 power transistor, 100 V, 300 A, HSOF, IPT015N10N5ATMA1
Brand: Infineon Technologies
SKU: 53S1006
Price: 4.84 EUR
Availability: OutOfStock

Infineon Technologies N channel OptiMOS5 power transistor, 100 V, 300 A, HSOF, IPT015N10N5ATMA1

Order No.: 53S1006

EAN: 4099879034670

MPN:

IPT015N10N5ATMA1

SP001227040

Series: IPT

IPT015N10N5ATMA1 Infineon Technologies MOSFETs

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 100 V

max. Strom 300 A

Einschaltwiderstand RDS (on) max @VGS=10V 2 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

4.8433 € *

Available: 0 pcs.

Leadtime: On Request **

Add to Cart

Total Price:

4.84 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IPT015N10N5ATMA1, Infineon Technologies

The IPT015N10N5ATMA1 is a power MOSFET that is otimized for high current applications up to 300 A such as forklifts or electric vehicles.

Features

Ideal for high frequency switching
Excellent gate charge
Very low on-resistance
N-channel, normal level

Applications

Telecom
Server
Solar
Low voltage drives
Low voltage vehicles
Adapter

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	2 mΩ
	Gate Charge Qg @10V (nC)	1.69x10<sup>-7</sup> C
	Gehäuse	HSOF
	max. Spannung	100 V
	max. Strom	300 A
	max. Temperatur	175 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	375 W