IPZ65R065C7XKSA1 | Infineon Technologies
Infineon Technologies N channel CoolMOSC7 power transistor, 650 V, 33 A, TO-247, IPZ65R065C7XKSA1
Unit Price (€ / pc.)
10.4006 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
10.40 € *
Price list
Quantity
Price per unit*
1 pcs.
10.4006 €
5 pcs.
9.4367 €
25 pcs.
8.9607 €
75 pcs.
8.5204 €
150 pcs.
8.2467 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IPZ65R065C7XKSA1, Infineon Technologies
The IPZ65R065C7XKSA1 is a high voltage power MOSFET that is designed according to the super junction.
Features
- Increased MOSFET dv/dt ruggedness
- Easy to use/drive due to driver source pin for better control of the gate
- Qualified for industrial grade applications
Applications
- Enabling higher system efficiency
- Enabling higher frequency/increased power density solutions
- System cost/size savings due to reduced cooling requirements
- Higher system reliability due to lower operating temperatures
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 65 mΩ | |
Gate Charge Qg @10V (nC) | 6.4x10<sup>-8</sup> C | |
Enclosure | TO-247 | |
max. Voltage | 650 V | |
Max. current | 33 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | THT | |
Power loss | 171 W |
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Logistics
Customs tariff number | 85412900 |
MSL | MSL 1 |
Original Packaging | Bar with 30 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |