IPZ65R065C7XKSA1 | Infineon Technologies
Infineon Technologies N channel CoolMOSC7 power transistor, 650 V, 33 A, TO-247, IPZ65R065C7XKSA1
Unit Price (€ / pc.)
10.4006 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
10.40 € *
Price list
Quantity
Price per unit*
1 pcs.
10.4006 €
5 pcs.
9.4367 €
25 pcs.
8.9607 €
75 pcs.
8.5204 €
150 pcs.
8.2467 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IPZ65R065C7XKSA1, Infineon Technologies
The IPZ65R065C7XKSA1 is a high voltage power MOSFET that is designed according to the super junction.
Features
- Increased MOSFET dv/dt ruggedness
- Easy to use/drive due to driver source pin for better control of the gate
- Qualified for industrial grade applications
Applications
- Enabling higher system efficiency
- Enabling higher frequency/increased power density solutions
- System cost/size savings due to reduced cooling requirements
- Higher system reliability due to lower operating temperatures
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 65 mΩ | |
| Gate Charge Qg @10V (nC) | 6.4x10<sup>-8</sup> C | |
| Gehäuse | TO-247 | |
| max. Spannung | 650 V | |
| max. Strom | 33 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 171 W |
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Logistics
| Zolltarifnummer | 85412900 |
| MSL | MSL 1 |
| Originalverpackung | Stange mit 30 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
