IRF1010NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 85 A, TO-220, IRF1010NPBF
Unit Price (€ / pc.)
1.6779 € *
Available: 0 pcs.
Available in 5 Days: 1,450 pcs.
Leadtime: 1 Week **
Total Price:
1.68 € *
Price list
Quantity
Price per unit*
10 pcs.
1.6779 €
25 pcs.
1.1900 €
50 pcs.
0.8925 €
100 pcs.
0.8092 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF1010NPBF, Infineon Technologies
The IRF1010NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 11 mΩ | |
| Gate Charge Qg @10V (nC) | 1.2x10<sup>-7</sup> C | |
| Enclosure | TO-220 | |
| max. Voltage | 55 V | |
| Max. current | 85 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 130 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 1 piece |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
