IRF1010NSTRLPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 85 A, TO-252-3, IRF1010NSTRLPBF
Unit Price (€ / pc.)
1.1305 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, IRF1010NSTRLPBF, Infineon Technologies
The IRF1010NSTRLPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 11 mΩ | |
| Gate Charge Qg @10V (nC) | 1.2x10<sup>-7</sup> C | |
| Gehäuse | TO-252-3 | |
| max. Spannung | 55 V | |
| max. Strom | 85 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 180 W |
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Logistics
| Zolltarifnummer | 85412900 |
| MSL | MSL 1 |
| Originalverpackung | Rolle mit 800 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
