IRF1010NSTRLPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 85 A, TO-252-3, IRF1010NSTRLPBF
Unit Price (€ / pc.)
1.1305 € *
Available: 0 pcs.
Leadtime: 10 Weeks **
MOSFET, IRF1010NSTRLPBF, Infineon Technologies
The IRF1010NSTRLPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 11 mΩ | |
| Gate Charge Qg @10V (nC) | 1.2x10<sup>-7</sup> C | |
| Enclosure | TO-252-3 | |
| max. Voltage | 55 V | |
| Max. current | 85 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 180 W |
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Logistics
| Customs tariff number | 85412900 |
| MSL | MSL 1 |
| Original Packaging | Reel with 800 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
