IRF1018EPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, TO-220AB, IRF1018EPBF
Order No.: 31S2058
MPN:
IRF1018EPBF
SP001574502
Unit Price (€ / pc.)
0.5712 € *
Available: 0 pcs.
Available in 5 Days: 1,230 pcs.
Leadtime: 8 Weeks **
HEXFET MOSFET NFET s Typ International Rectifier IRF.
Tabellenangaben: Typ, Spannung (VDSS), Widerstand RDS(ON), Strom: ID, Gehäuse.
N-Channel-Ausführung.
Type: IRF1018EPBF, 60 V, 7,1 bis 8,4 mOhm, TO220AB
Technical specifications
| Version | N-Kanal | |
| drain-source on resistance RDS (on) max @VGS=10V | 8.4 mΩ | |
| Gate Charge Qg @10V (nC) | 4.6x10<sup>-8</sup> C | |
| Enclosure | TO-220AB | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
