IRF3808PBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 75 V, 140 A, TO-220, IRF3808PBF
Unit Price (€ / pc.)
1.7255 € *
Available: 0 pcs.
Available in 5 Days: 1,050 pcs.
Leadtime: 10 Weeks **
MOSFET, IRF3808PBF, Infineon Technologies
The IRF3808PBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The design is an extremely efficient and reliable for use in a wide variety of applications.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Applications
- Industrial motor drive
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 7 mΩ | |
| Gate Charge Qg @10V (nC) | 1.5x10<sup>-7</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 75 V | |
| max. Strom | 140 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -40 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 330 W |
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Logistics
| Ursprungsland | PH |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 202 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
