IRF3808PBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 75 V, 140 A, TO-220, IRF3808PBF
Unit Price (€ / pc.)
1.7255 € *
Available: 0 pcs.
Available in 5 Days: 1,510 pcs.
Leadtime: 10 Weeks **
MOSFET, IRF3808PBF, Infineon Technologies
The IRF3808PBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The design is an extremely efficient and reliable for use in a wide variety of applications.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Avalanche rated
Applications
- Industrial motor drive
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 7 mΩ | |
| Gate Charge Qg @10V (nC) | 1.5x10<sup>-7</sup> C | |
| Enclosure | TO-220 | |
| max. Voltage | 75 V | |
| Max. current | 140 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -40 °C | |
| Assembly | THT | |
| Power loss | 330 W |
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Logistics
| Country of origin | PH |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 202 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
