IRF520NSTRLPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 9.7 A, TO-252-3, IRF520NSTRLPBF
Unit Price (€ / pc.)
0.6307 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, IRF520NSTRLPBF, Infineon Technologies
The IRF520NSTRLPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package.
Features
- Advanced process technology
- Surface mounted
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 200 mΩ | |
| Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
| Gehäuse | TO-252-3 | |
| max. Spannung | 100 V | |
| max. Strom | 9.7 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 48 W |
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Logistics
| Zolltarifnummer | 85412900 |
| MSL | MSL 1 |
| Originalverpackung | Rolle mit 800 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
