IRF530NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 17 A, TO-220, IRF530NPBF
Unit Price (€ / pc.)
0.5795 € *
Available: 30 pcs.
Next delivery: 200 pcs. on 2025-07-30
Leadtime: 10 Weeks **
Total Price:
0.58 € *
Price list
Quantity
Price per unit*
1 pcs.
0.5795 €
100 pcs.
0.5141 €
1000 pcs.
0.4403 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF530NPBF, Infineon Technologies
The IRF530NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 90 mΩ | |
| Gate Charge Qg @10V (nC) | 3.7x10<sup>-8</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 100 V | |
| max. Strom | 17 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 70 W |
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Logistics
| Ursprungsland | MX |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
