IRF610-T | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 3.3 A, TO-220, IRF610-T
Abgekündigt
Unit Price (€ / pc.)
2.0230 € *
Available: 25 pcs.
Leadtime: On Request **
Total Price:
2.02 € *
Price list
Quantity
Price per unit*
1 pcs.
2.0230 €
50 pcs.
1.7731 €
100 pcs.
1.5708 €
250 pcs.
1.4161 €
500 pcs.
1.2852 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF610-T, Infineon Technologies
The IRF610-T is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 1.5 Ω | |
| Gate Charge Qg @10V (nC) | 8.2x10<sup>-9</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 100 V | |
| max. Strom | 3.3 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 36 W |
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Logistics
| Ursprungsland | MX |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
