IRF610-T | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 3.3 A, TO-220, IRF610-T
Discontinued
Unit Price (€ / pc.)
2.0230 € *
Available: 25 pcs.
Leadtime: On Request **
Total Price:
2.02 € *
Price list
Quantity
Price per unit*
1 pcs.
2.0230 €
50 pcs.
1.7731 €
100 pcs.
1.5708 €
250 pcs.
1.4161 €
500 pcs.
1.2852 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF610-T, Infineon Technologies
The IRF610-T is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- Ease of paralleling
- Simple drive requirements
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 1.5 Ω | |
| Gate Charge Qg @10V (nC) | 8.2x10<sup>-9</sup> C | |
| Enclosure | TO-220 | |
| max. Voltage | 100 V | |
| Max. current | 3.3 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 36 W |
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Logistics
| Country of origin | MX |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 50 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
