IRF7303TRPBF | Infineon Technologies
Infineon Technologies N channel dual HEXFET power MOSFET, 30 V, 4.9 A, SO-8, IRF7303TRPBF
Unit Price (€ / pc.)
0.8330 € *
Available: 3,910 pcs.
Leadtime: On Request **
Total Price:
8.33 € *
Price list
Quantity
Price per unit*
10 pcs.
0.8330 €
50 pcs.
0.7378 €
250 pcs.
0.6307 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF7303TRPBF, Infineon Technologies
The IRF7303TRPBF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Features
- Generation V Technology
- Ultra Low On-Resistance
- Dual N-Channel Mosfet
- Dynamic dv/dt rating
- Fast switching
Applications
- For power applications
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 0.05 Ω | |
| Einschaltwiderstand RDS (on) max @VGS=4,5V | 0.08 Ω | |
| Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
| Gehäuse | SO-8 | |
| max. Spannung | 30 V | |
| max. Strom | 4.9 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 2 W |
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Logistics
| Ursprungsland | MY |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 44.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
