IRF7303TRPBF | Infineon Technologies
Infineon Technologies N channel dual HEXFET power MOSFET, 30 V, 4.9 A, SO-8, IRF7303TRPBF
Unit Price (€ / pc.)
0.8330 € *
Available: 3,930 pcs.
Leadtime: On Request **
Total Price:
8.33 € *
Price list
Quantity
Price per unit*
10 pcs.
0.8330 €
50 pcs.
0.7378 €
250 pcs.
0.6307 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF7303TRPBF, Infineon Technologies
The IRF7303TRPBF has been modified through a customized leadframe for enhanced thermal characteristics and multiple-die capability making it ideal in a variety of power applications.
Features
- Generation V Technology
- Ultra Low On-Resistance
- Dual N-Channel Mosfet
- Dynamic dv/dt rating
- Fast switching
Applications
- For power applications
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 0.05 Ω | |
| drain-source on resistance RDS (on) max @VGS=4,5V | 0.08 Ω | |
| Gate Charge Qg @10V (nC) | 2.5x10<sup>-8</sup> C | |
| Enclosure | SO-8 | |
| max. Voltage | 30 V | |
| Max. current | 4.9 A | |
| max. operating temperature | 150 °C | |
| min. operating temperature | -55 °C | |
| Assembly | SMD | |
| Power loss | 2 W |
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Logistics
| Country of origin | MY |
| Customs tariff number | 85412900 |
| Original Packaging | Reel with 44,000 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
