IRF7509TRPBF | Infineon Technologies
Infineon Technologies N/P-channel dual HEXFET power MOSFET, 30 V, 2.7 A, TSSOP-8, IRF7509TRPBF
Unit Price (€ / pc.)
0.4522 € *
Available: 675 pcs.
Leadtime: On Request **
Total Price:
2.26 € *
Price list
Quantity
Price per unit*
5 pcs.
0.4522 €
50 pcs.
0.4046 €
100 pcs.
0.3689 €
500 pcs.
0.3332 €
1000 pcs.
0.3213 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF7509TRPBF, Infineon Technologies
The IRF7509TRPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Generation V technology
- Ultra low on-resistance
- Dual N and P-channel MOSFET
- Low profile
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
Version | N/P-channel | |
drain-source on resistance RDS (on) max @VGS=10V | 20 mΩ | |
drain-source on resistance RDS (on) max @VGS=4,5V | 175.4 Ω | |
Gate Charge Qg @10V (nC) | 1x10<sup>-9</sup> C | |
Enclosure | TSSOP-8 | |
max. Voltage | 30 V | |
Max. current | 2.7 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD | |
Power loss | 1.25 W |
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Logistics
Country of origin | QU |
Customs tariff number | 85412900 |
Original Packaging | Reel with 1 piece |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |