IRF9530NPBF | Infineon Technologies
Infineon Technologies P-channel HEXFET power MOSFET, -100 V, -14 A, TO-220, IRF9530NPBF
Unit Price (€ / pc.)
1.1305 € *
Available: 1,986 pcs.
Available in 5 Days: 2,800 pcs.
Leadtime: 10 Weeks **
Total Price:
1.13 € *
Price list
Quantity
Price per unit*
1 pcs.
1.1305 €
10 pcs.
0.8092 €
100 pcs.
0.6902 €
500 pcs.
0.5831 €
1000 pcs.
0.5355 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF9530NPBF, Infineon Technologies
The IRF9530NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- P-channel
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
Ausführung | P-Kanal | |
Einschaltwiderstand RDS (on) max @VGS=10V | 200 mΩ | |
Gate Charge Qg @10V (nC) | 5.8x10<sup>-8</sup> C | |
Gehäuse | TO-220 | |
max. Spannung | -100 V | |
max. Strom | -14 A | |
max. Temperatur | 175 °C | |
min. Temperatur | -55 °C | |
Montage | THT | |
Verlustleistung W (DC) | 79 W |
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Logistics
Ursprungsland | MX |
Zolltarifnummer | 85412900 |
Originalverpackung | Stange mit 1 Stück |
Compliance
RoHS konform | Yes |
Stand der RoHS-Richtlinie | 3/31/15 |
SVHC frei | Yes |