IRF9Z34NPBF | Infineon Technologies
Infineon Technologies P-channel HEXFET power MOSFET, -55 V, -19 A, TO-220, IRF9Z34NPBF
Unit Price (€ / pc.)
0.5831 € *
Available: 0 pcs.
Available in 5 Days: 300 pcs.
Leadtime: 50 Weeks **
Total Price:
0.58 € *
Price list
Quantity
Price per unit*
10 pcs.
0.5831 €
50 pcs.
0.5474 €
100 pcs.
0.5236 €
250 pcs.
0.4998 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRF9Z34NPBF, Infineon Technologies
The IRF9Z34NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Advanced process technology
- Ultra low on-resistance
- Dynamic dv/dt rating
- Fast switching
- P-channel
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Ausführung | P-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 100 mΩ | |
| Gate Charge Qg @10V (nC) | 3.5x10<sup>-8</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | -55 V | |
| max. Strom | -19 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -40 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 68 W |
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Logistics
| Ursprungsland | US |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
