IRFB3607PBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 75 V, 80 A, TO-220, IRFB3607PBF
Unit Price (€ / pc.)
0.6307 € *
Available: 50 pcs.
Available in 5 Days: 2,600 pcs.
Leadtime: 12 Weeks **
MOSFET, IRFB3607PBF, Infineon Technologies
Features
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Applications
- High efficiency synchronous rectification in SMPS
- Uninterruptible power supply
- High speed power switching
- Hard switched and high frequency circuits
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 9 mΩ | |
| Gate Charge Qg @10V (nC) | 5.6x10<sup>-8</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 75 V | |
| max. Strom | 80 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 140 W |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 656 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
