IRFB4020PBF | Infineon Technologies
Infineon Technologies N channel digital audio MOSFET, 200 V, 18 A, TO-220, IRFB4020PBF
Unit Price (€ / pc.)
1.3804 € *
Available: 0 pcs.
Available in 5 Days: 630 pcs.
Leadtime: 12 Weeks **
Total Price:
1.38 € *
Price list
Quantity
Price per unit*
10 pcs.
1.3804 €
50 pcs.
1.2138 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRFB4020PBF, Infineon Technologies
The IRFB4020PBF is specifically designed for class-D audio amplifier applications. This MOSFET utilizes the latest processing techniques to achieve low on-resistance per silicon area.
Features
- Key parameters optimized for class-D audio amplifier applications
- Improved efficiency
- Low Q for better THD and lower EMI
- Can deliver up to 300 W per channel into 8 Ω load in half-bridge configuration amplifier
Applications
- DC motors
- Battery management systems
- Inverters
- DC-DC converters
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 100 mΩ | |
| Gate Charge Qg @10V (nC) | 1.8x10<sup>-8</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 200 V | |
| max. Strom | 18 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 52 W |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
