IRFB4227PBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 200 V, 65 A, TO-220, IRFB4227PBF
Unit Price (€ / pc.)
2.7251 € *
Available: 0 pcs.
Available in 5 Days: 950 pcs.
Leadtime: 12 Weeks **
Total Price:
2.73 € *
Price list
Quantity
Price per unit*
1 pcs.
2.7251 €
100 pcs.
2.4157 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRFB4227PBF, Infineon Technologies
The IRFB4227PBF is a power MOSFET rectifier that utilizes processing techniques to achieve low on-resistance per silicon area and low E rating.
Features
- Advanced process technology
- Key parameters optimized for PDP sustain, energy recovery and pass switch applications
- Low E rating to reduce power dissipation
- Low Q for fast response
- High repetitive peak current capability for reliable operation
- Short fall and rise times for fast switching
- Repetitive avalanche capability for robustness and reliability
Applications
- DC motors
- Battery management systems
- Inverters
- DC-DC converters
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 24 mΩ | |
| Gate Charge Qg @10V (nC) | 7x10<sup>-8</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 200 V | |
| max. Strom | 65 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -40 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 330 W |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
