IRFB4310PBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 100 V, 130 A, TO-220, IRFB4310PBF
Unit Price (€ / pc.)
2.3205 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, IRFB4310PBF, Infineon Technologies
Features
- Improved gate, avalanche and dynamic dV/dt ruggedness
- Fully characterized capacitance and avalanche SOA
- Enhanced body diode dV/dt and dI/dt capability
Applications
- High efficiency synchronous rectification in SMPS
- Uninterruptible power supply
- High speed power switching
- Hard switched and high frequency circuits
Technical specifications
| Version | N channel | |
| drain-source on resistance RDS (on) max @VGS=10V | 7 mΩ | |
| Gate Charge Qg @10V (nC) | 1.7x10<sup>-7</sup> C | |
| Enclosure | TO-220 | |
| max. Voltage | 100 V | |
| Max. current | 130 A | |
| max. operating temperature | 175 °C | |
| min. operating temperature | -55 °C | |
| Assembly | THT | |
| Power loss | 300 W |
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Logistics
| Country of origin | CN |
| Customs tariff number | 85412900 |
| Original Packaging | Bar with 100 pieces |
Compliance
| RoHS conform | Yes |
| Date of RoHS guidelines | 3/31/15 |
| SVHC free | Yes |
