IRFH8318TRPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 30 V, 27 A, PQFN, IRFH8318TRPBF
Unit Price (€ / pc.)
0.3927 € *
Available: 0 pcs.
Leadtime: On Request **
Power MOSFET, IRFH8318TRPBF, Infineon Technologies
Synchronous MOSFET for high frequency buck converters
Features
- Low Thermal Resistance to PCB (< 1.7°C/
- Low Profile (<1.2mm)
- Industry-Standard Pinou
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 3.1 mΩ | |
| Einschaltwiderstand RDS (on) max @VGS=4,5V | 4.6 mΩ | |
| Gate Charge Qg @10V (nC) | 4.1x10<sup>-8</sup> C | |
| Gehäuse | PQFN | |
| max. Spannung | 30 V | |
| max. Strom | 27 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 3.6 W |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 4.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
