IRFP250NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 200 V, 30 A, TO-247, IRFP250NPBF
Unit Price (€ / pc.)
1.6184 € *
Available: 4,722 pcs.
Leadtime: 2 Weeks **
Total Price:
1.62 € *
Price list
Quantity
Price per unit*
1 pcs.
1.6184 €
25 pcs.
1.4994 €
100 pcs.
1.3685 €
250 pcs.
1.2971 €
1000 pcs.
1.2138 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRFP250NPBF, Infineon Technologies
The IRFP250NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Advanced process technology
- Ease of paralleling
- Dynamic dv/dt rating
- Fast switching
- Simple drive requirements
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 75 mΩ | |
| Gate Charge Qg @10V (nC) | 1.23x10<sup>-7</sup> C | |
| Gehäuse | TO-247 | |
| max. Spannung | 200 V | |
| max. Strom | 30 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 214 W |
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Logistics
| Ursprungsland | MX |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 25 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
