IRFR1205TRPBF | Infineon Technologies

Infineon Technologies N channel HEXFET power MOSFET, DPAK, IRFR1205TRPBF

Order No.: 54S1061
MPN:
IRFR1205TRPBF
SP001560566
IRFR1205TRPBF Infineon Technologies MOSFETs
Image may differ
Unit Price (€ / pc.)
0.4522 € *
Available: 0 pcs.
Leadtime: 10 Weeks **
Total Price:
22.61 € *
*incl. VAT plus shipping costs
**Subject to prior sale
50 pcs.
0.4522 €

Power MOSFET, IRFR1205TRPBF, INFINEON

Fifth Generation HEXFET from International Rectifier utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFET is well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

Features

  • Planar cell structure for wide SOA
  • Optimized for broadest availability from distribution partners
  • Silicon optimized for applications switching below < 100 kHz
  • Industry standard surface mount package
  • Standard pinout allows for drop-in replacement
Technical specifications
Version N-Kanal
drain-source on resistance RDS (on) max @VGS=10V 27 mΩ
Gate Charge Qg @10V (nC) 4.33x10<sup>-8</sup> C
Enclosure DPAK
max. operating temperature 175 °C
min. operating temperature -55 °C
Assembly SMD
Logistics
Country of origin CN
Original Packaging Rolle mit 2.000 Stück
Compliance
RoHS conform Yes
Date of RoHS guidelines 3/31/15
SVHC free Yes