IRL7472L1TRPBF | Infineon Technologies

Name: Infineon Technologies N channel DirectFET power MOSFET, 40 V, 375 A, directFET-L8, IRL7472L1TRPBF
Brand: Infineon Technologies
SKU: 54S1009
Price: 2.52 EUR
Availability: OutOfStock

Infineon Technologies N channel DirectFET power MOSFET, 40 V, 375 A, directFET-L8, IRL7472L1TRPBF

Order No.: 54S1009

EAN: 4099879034694

MPN:

IRL7472L1TRPBF

Series: IRL

IRL7472L1TRPBF Infineon Technologies MOSFETs Image 2

Image may differ

Key Specification:

Ausführung N-Kanal

max. Spannung 40 V

max. Strom 375 A

Einschaltwiderstand RDS (on) max @VGS=10V 0.45 mΩ

Download Datasheet Technical specifications

Unit Price (€ / pc.)

2.5228 € *

Available: 0 pcs.

Leadtime: On Request **

Add to Cart

Total Price:

2.52 € *

*incl. VAT plus shipping costs

**Subject to prior sale

Description

MOSFET, IRL7472L1TRPBF, Infineon Technologies

Features

Optimized for logic level drive
Improved gate, avalanche and dynamic dv/dt ruggedness
Fully characterized capacitance and avalanche SOA
Enhanced body diode dv/dt and di/dt capability
Lead-Free, RoHS compliant

Applications

Brushed motor drive applications
BLDC motor drive applications
Battery powered circuits
Half-bridge and full-bridge topologies
Synchronous rectifier applications
DC/DC and AC/DC converters
DC/AC Inverters

Technical specifications

	Ausführung	N-Kanal
	Einschaltwiderstand RDS (on) max @VGS=10V	0.45 mΩ
	Gate Charge Qg @10V (nC)	1.33x10<sup>-7</sup> C
	Gehäuse	DirectFET-L8
	max. Spannung	40 V
	max. Strom	375 A
	max. Temperatur	175 °C
	min. Temperatur	-55 °C
	Montage	SMD
	Verlustleistung W (DC)	341 W