IRLML6302TRPBF | Infineon Technologies
Infineon Technologies P-channel HEXFET power MOSFET, -20 V, -780 mA, SOT-23, IRLML6302TRPBF
Unit Price (€ / pc.)
0.1309 € *
Available: 0 pcs.
Leadtime: On Request **
MOSFET, IRLML6302TRPBF, Infineon Technologies
The IRLML6302TRPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area.
Features
- Generation V technology
- Ultra low on-resistance
- P-channel MOSFET
- Low profile
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Ausführung | P-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 600 mΩ | |
| Gate Charge Qg @10V (nC) | 5x10<sup>-9</sup> C | |
| Gehäuse | SOT-23 | |
| max. Spannung | -20 V | |
| max. Strom | -780 mA | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 540 W |
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Logistics
| Ursprungsland | US |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Rolle mit 153.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
