IRLML6402TRPBF | Infineon Technologies
Infineon Technologies P-channel HEXFET power MOSFET, 20 V, 3.7 A, SOT-23, IRLML6402TRPBF
Unit Price (€ / pc.)
0.3808 € *
Available: 25,156 pcs.
Leadtime: On Request **
Total Price:
0.38 € *
Price list
Quantity
Price per unit*
1 pcs.
0.3808 €
10 pcs.
0.2404 €
50 pcs.
0.1714 €
250 pcs.
0.1428 €
1000 pcs.
0.1226 €
*incl. VAT plus shipping costs
**Subject to prior sale
Power MOSFET, IRLML6402TRPBF, Infineon Technologies
These P-Channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET® power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in battery and load management.
Features
- Ultra Low On-Resistance
- P-Channel MOSFET
- SOT-23 Footprint
Technical specifications
| Ausführung | P-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 65 mΩ | |
| Gate Charge Qg @10V (nC) | 8x10<sup>-9</sup> C | |
| Gehäuse | SOT-23 | |
| max. Spannung | 20 V | |
| max. Strom | 3.7 A | |
| max. Temperatur | 150 °C | |
| min. Temperatur | -55 °C | |
| Montage | SMD | |
| Verlustleistung W (DC) | 1.3 W |
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Logistics
| Ursprungsland | PH |
| Zolltarifnummer | 85412900 |
| MSL | MSL 1 |
| Originalverpackung | Rolle mit 3.000 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
