IRLZ24NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 18 A, TO-220, IRLZ24NPBF
Unit Price (€ / pc.)
0.6307 € *
Available: 0 pcs.
Leadtime: 99 Weeks **
Total Price:
0.63 € *
Price list
Quantity
Price per unit*
10 pcs.
0.6307 €
50 pcs.
0.5950 €
100 pcs.
0.5593 €
250 pcs.
0.5355 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRLZ24NPBF, Infineon Technologies
The IRLZ24NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Logic level gate driver
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 60 mΩ | |
drain-source on resistance RDS (on) max @VGS=4,5V | 105 mΩ | |
Gate Charge Qg @10V (nC) | 1.5x10<sup>-8</sup> C | |
Enclosure | TO-220 | |
max. Voltage | 55 V | |
Max. current | 18 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | THT | |
Power loss | 45 W |
Download
Logistics
Country of origin | MX |
Customs tariff number | 85412900 |
Original Packaging | Bar with 50 pieces |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |