IRLZ24NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 18 A, TO-220, IRLZ24NPBF
Unit Price (€ / pc.)
0.6307 € *
Available: 0 pcs.
Leadtime: 99 Weeks **
Total Price:
0.63 € *
Price list
Quantity
Price per unit*
10 pcs.
0.6307 €
50 pcs.
0.5950 €
100 pcs.
0.5593 €
250 pcs.
0.5355 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRLZ24NPBF, Infineon Technologies
The IRLZ24NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Logic level gate driver
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 60 mΩ | |
| Einschaltwiderstand RDS (on) max @VGS=4,5V | 105 mΩ | |
| Gate Charge Qg @10V (nC) | 1.5x10<sup>-8</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 55 V | |
| max. Strom | 18 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 45 W |
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Logistics
| Ursprungsland | MX |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 50 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
