IRLZ34NPBF | Infineon Technologies
Infineon Technologies N channel HEXFET power MOSFET, 55 V, 30 A, TO-220, IRLZ34NPBF
Unit Price (€ / pc.)
0.7735 € *
Available: 696 pcs.
Leadtime: On Request **
Total Price:
0.77 € *
Price list
Quantity
Price per unit*
1 pcs.
0.7735 €
25 pcs.
0.6307 €
100 pcs.
0.5236 €
250 pcs.
0.4522 €
1000 pcs.
0.3927 €
*incl. VAT plus shipping costs
**Subject to prior sale
MOSFET, IRLZ34NPBF, Infineon Technologies
The IRLZ34NPBF is a power MOSFET rectifier that utilizes advanced processing techniques to achieve extremely low on-resistance per silicon area. The low thermal resistance of the TO-220 contributes to its wide acceptance throughout the industry.
Features
- Logic level gate driver
- Advanced process technology
- Dynamic dv/dt rating
- Fast switching
Applications
- DC motors
- Inverters
- SMPS
- Lighting
- Load switches
- Battery powered applications
Technical specifications
| Ausführung | N-Kanal | |
| Einschaltwiderstand RDS (on) max @VGS=10V | 35 mΩ | |
| Gate Charge Qg @10V (nC) | 9.3x10<sup>-9</sup> C | |
| Gehäuse | TO-220 | |
| max. Spannung | 55 V | |
| max. Strom | 30 A | |
| max. Temperatur | 175 °C | |
| min. Temperatur | -55 °C | |
| Montage | THT | |
| Verlustleistung W (DC) | 56 W |
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Logistics
| Ursprungsland | CN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Stange mit 500 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
