FP40R12KE3BOSA1 | Infineon Technologies
IGBT PIM Mod.3ph.55A 2,3V 200W FP40R12KE3BOSA1
Order No.: 17S7434
EAN: 4099879035660
MPN:
FP40R12KE3BOSA1
IGBTModule NCH 1200V 55A 210W 24Pin ECONO2-5 Tray
Series: FP40R
Unit Price (€ / pc.)
112.4669 € *
Available: 0 pcs.
Leadtime: On Request **
Total Price:
112.47 € *
Price list
Quantity
Price per unit*
1 pcs.
112.4669 €
2 pcs.
107.4213 €
3 pcs.
104.3154 €
*incl. VAT plus shipping costs
**Subject to prior sale
IGBT Transistor, FP40R12KE3BOSA1, NXP
The Insulated Gate Bipolar Transistor or IGBT is a three-terminal power semiconductor device, noted for high efficiency and fast switching. The IGBT combines the simple gate-drive characteristics of the MOSFETs with the high-current and low–saturation-voltage capability of bipolar transistors by combining an isolated gate FET for the control input, and a bipolar power transistor as a switch, in a single device.
Technical specifications
| Anwendung | Energiemanagement/Medizin | |
| Ausführung | Dreiphasiger Wechselrichter | |
| max. Spannung | 1200 V | |
| max. Strom | 55 A | |
| max. Temperatur | 125 °C |
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Logistics
| Zolltarifnummer | 85412900 |
| Originalverpackung | Tray mit 10 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
