BUZ21 | International Power Semiconductor
International Power Semiconductor N channel V-MOS transistor, TO-220, BUZ21
Unit Price (€ / pc.)
3.2844 € *
Available: 313 pcs.
Leadtime: 5 Weeks **
Total Price:
3.28 € *
Price list
Quantity
Price per unit*
1 pcs.
3.2844 €
10 pcs.
2.8798 €
100 pcs.
2.5347 €
200 pcs.
2.4395 €
800 pcs.
2.2729 €
*incl. VAT plus shipping costs
**Subject to prior sale
Transistor, BUZ21, IPS
This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high power bipolar switching transistors requiring high speed and low gate drive power. This type can be operated directly from integrated circuits.
Features
- SOA is Power Dissipation Limited
- Nanosecond Switching Speeds
- Linear Transfer Characteristics
- High Input Impedance
- Majority Carrier Device
Technical specifications
| Ausführung | N-Kanal | |
| Gehäuse | TO-220 | |
| Montage | THT |
Download
Logistics
| Ursprungsland | IN |
| Zolltarifnummer | 85412900 |
| Originalverpackung | Bulk mit 100 Stück |
Compliance
| RoHS konform | Yes |
| Stand der RoHS-Richtlinie | 3/31/15 |
| SVHC frei | Yes |
