IXFA180N10T2 | Littelfuse
Littelfuse N channel trench gate power MOSFET, 100 V, 180 A, TO-263, IXFA180N10T2
Unit Price (€ / pc.)
5.1289 € *
Available: 0 pcs.
Leadtime: 45 Weeks **
MOSFET, IXFA180N10T2, LITTELFUSE
A power MOSFET with N-Channel enhancement mode, avalanche rating, and with advantages such as high power density, easy mounting, and space saving.
Features
- High current handling capability
- Fast intrinsic rectifier
- Dynamic dv/dt rating
- Low RDS(on)
- International standard package
Applications
- Synchronous rectification
- DC-DC converters
- Battery chargers
- Switch-mode and resonant-mode power supplies
- DC choppers
- AC motor drives
- Uninterruptible power supplies (UPS)
- High speed power switching applications
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 6 mΩ | |
Gate Charge Qg @10V (nC) | 1.85x10<sup>-7</sup> C | |
Enclosure | TO-263 | |
max. Voltage | 100 V | |
Max. current | 180 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | SMD | |
Power loss | 480 W |
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Logistics
Country of origin | KR |
Customs tariff number | 85411000 |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |