IXFN200N10P | Littelfuse
Littelfuse N channel HiPerFET power MOSFET, 100 V, 200 A, SOT-227, IXFN200N10P
Unit Price (€ / pc.)
26.6798 € *
Available: 0 pcs.
Leadtime: 43 Weeks **
MOSFET, IXFN200N10P, Littelfuse
IXFN200N10P combines the strengths of the polar standard product with a faster body diode, whose reverse recovery time (trr) is reduced to make it suitable for phase-shift bridges motor control and uninterruptible power supply applications.
Features
- Dynamic dv/dt rating
- Easy to mount
- Space saving
Applications
- DC-DC converters
- Battery chargers
- AC motor drives
- High speed power switching applications
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 7.5 mΩ | |
Gate Charge Qg @10V (nC) | 2.35x10<sup>-7</sup> C | |
Enclosure | SOT-227 | |
max. Voltage | 100 V | |
Max. current | 200 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | screw mounting | |
Power loss | 680 W |
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Logistics
Country of origin | KR |
Customs tariff number | 85412900 |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |