IXFN360N10T | Littelfuse
Littelfuse N channel GigaMOS trench HiperFETT power MOSFET, 100 V, 360 A, SOT-227, IXFN360N10T
Order No.: 74P1039
EAN: 4099891779047
MPN:
IXFN360N10T
Unit Price (€ / pc.)
26.2633 € *
Available: 0 pcs.
Leadtime: 45 Weeks **
MOSFET, IXFN360N10T, Littelfuse
IXFN360N10T offers both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode.
Features
- High current handling capability
- Avalanche rated
- Low package inductance
- Fast intrinsic diode
- Easy to mount
- Space saving
- High power density
Applications
- DC-DC converters
- Battery chargers
- DC choppers
- AC motor drives
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 2.6 mΩ | |
Gate Charge Qg @10V (nC) | 5.25x10<sup>-7</sup> C | |
Enclosure | SOT-227 | |
max. Voltage | 100 V | |
Max. current | 360 A | |
max. operating temperature | 175 °C | |
min. operating temperature | -55 °C | |
Assembly | screw mounting | |
Power loss | 830 W |
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Logistics
Country of origin | KR |
Customs tariff number | 85412900 |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |