IXFN55N50 | Littelfuse
Littelfuse N channel HiPerFET power MOSFET, 500 V, 50 A, SOT-227, IXFN55N50
Unit Price (€ / pc.)
42.1379 € *
Available: 0 pcs.
Leadtime: 98 Weeks **
MOSFET, IXFN55N50, Littelfuse
IXFN55N50 offers both hard switching and resonant mode applications, offering low gate charge and excellent ruggedness with a fast intrinsic diode.
Features
- High current handling capability
- Avalanche rated
- Low package inductance
- Fast intrinsic diode
- Easy to mount
- Space saving
- High power density
Applications
- DC-DC converters
- Battery chargers
- DC choppers
- AC motor drives
Technical specifications
Version | N channel | |
drain-source on resistance RDS (on) max @VGS=10V | 90 mΩ | |
Gate Charge Qg @10V (nC) | 3.3x10<sup>-7</sup> C | |
Enclosure | SOT-227 | |
max. Voltage | 500 V | |
Max. current | 50 A | |
max. operating temperature | 150 °C | |
min. operating temperature | -55 °C | |
Assembly | screw mounting | |
Power loss | 595 W |
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Logistics
Country of origin | KR |
Customs tariff number | 85412900 |
Compliance
RoHS conform | Yes |
Date of RoHS guidelines | 3/31/15 |
SVHC free | Yes |